A method for in-situ electrical measurements of thin film heterostructures using TEM and SEM

A method for in-situ measurements of electrical properties of thin film heterostructures using TEM and SEM has been developed. This method allows measurements of the conductance in a thin film heterostructure in a direction along the film planes in thin TEM foils. The advantage is that the properties can be directly correlated to the local atomic structure. The specimens are cross section TEM samples prepared with standard grinding, polishing and ion beam milling techniques.