Polyaniline / silicon heterojunctions

Abstract The p-n and p-p polyaniline PAn/Si heterojunctions have been prepared and investigated. It is demonstrated experimentally that the p-n PAn/si heterojunction is a fine rectifying junction with obvious photoelectrical characteristics, and the barrier of the p-n PAn/Si heterojunction is mostly concentrated at the surface of Si. The interface states located at 1/3 E g in the band gap of Si play important roles in the p-n PAn/Si heterojuction. The operation principle of the conducting polymer PAn/Silicon heterojunction is different from that of conventional heterojunction consisting of two kinds of inorganic semiconductors.