Proton induced differential cross sections on 14N and 28Si from 3 to 4 MeV

Abstract In this work commercially available self-supporting thin silicon-nitride films were applied to measure the differential cross sections for the reactions 28 Si(p,p′γ) 28 Si (E γ  = 1779 keV) and 14 N(p,p′γ) 14 N (E γ  = 2313 keV) in the proton energy range of 3–4 MeV. For an additional validation of the data, the cross section from the present work and from the literature were integrated and compared to experimental thick target yields. Gamma-rays were detected simultaneously with backscattered particles using a HPGe detector at 55° and an ion implanted Si detector at 135° with respect to the beam direction. As a by-product, differential gamma-ray and particle production cross sections were measured for the first time in the 29 Si(p,p′γ) 29 Si (E γ  = 1273 keV) reaction at 55°, as well as in the nat N(p,p o ) nat N, nat Si(p,p o ) nat Si and 28 Si(p,p 1 ) 28 Si elastic and inelastic scatterings at 135° from 3 to 4 MeV proton energies.