Positron annihilation and NMR studies of thin multilayered Co/Si structure

Multilayered structures consisting of ten Co/Si pairs (20 and 80 nm thick, respectively) on Si(100) substrates have been studied by means of positron annihilation and NMR techniques in the process of isochronal annealing. Two stages of defect-structure evolution have been found and accounted for the defect annealing in Co/Si film (below 400°C) and for the defect formation under the α → β phase transition in Co layers at 470°C.