Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)

High numerical aperture (high-NA) extreme ultraviolet (EUV) is one option to enable a higher resolution than EUV can achieve with single patterning. An industry effort to achieve consensus on the key parameters of high-NA EUV is described. At high-NA, three-dimensional (3D) mask effects cause a loss of contrast in the image that is recovered by increasing the scanner de-magnification. This leads to a tradeoff between wafer field and mask size that has considerable impact on mask cost and scanner cost of ownership.