Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing

The influence of the high temperature annealing on differently implanted Al profiles was investigated by SIMS measurements. Depending on the implanted dose and also depending on the local concentration a significant diffusion of the implanted Al was observed. Based on this results at least two necessary conditions of Al diffusion during high temperature annealing could be determined.