Strain Ge inverted trapezoidal grid PMOS device and preparation method thereof

The invention relates to a strain Ge inverted trapezoidal grid PMOS device and a preparation method thereof. The preparation method comprises that an SOI substrate is selected; an N type strain Ge layer is formed on the SOI substrate to form a PMOS active region; the surface of the PMOS active region is photo-etched to form a PMOS grid pattern, and a double-trapezoid groove is formed in the PMOS active region by a particle beam etching technology; a grid medium material is formed at the surface of the PMOS active region; the grid medium material at specific position of the surface of the PMOS active region is etched, and P type ions are injected into the PMOS active region to form a PMOS source-drain area; metal is deposited over the double trapezoid groove to form a PMOS grid; and metallization is carried out, the drain, source and grid leads are photo-etched to form the strain Ge inverted trapezoidal grid PMOS device.