Reverse conducting igbt device and manufacturing method therefor

Disclosed are a reverse conducting IGBT device and a manufacturing method therefor. The manufacturing method for a reverse conducting IGBT device comprises: providing a semiconductor structure, the semiconductor structure comprising an IGBT cellular region (210) and a fast recovery diode cellular region (220) which are separated from each other; forming a copper electrode layer (301) on an upper surface of the IGBT cellular region; taking the copper electrode layer as a blocking layer to perform ion implantation on the semiconductor structure; and forming a metal electrode layer (302) on an upper surface of the fast recovery diode cellular region, the metal electrode layer being electrically connected to the copper electrode layer on the upper surface of the IGBT cellular region.