Further studies on the effects of ionizing radiation, heating cycles and quenching on the temperature dependence of the electronic conductivity of different dilute AlSi and AlFe alloys

Abstract Wires of pure Al, dilute AlSi, and more dilute AlFe alloys were carefully prepared. Comprehensive measurements of the direct voltage electrical conductivity were made on several specimens of these materials. Furthermore, conductivity measurements were followed as a function of temperature, heat recycling, quenching, Si or Fe content, and after a chosen absorbed gamma dose. Values of activation energies for conduction, energy gap and the activation energy for the process of carrier liberation were established and discussed in detail. In the higher temperature region, the electrical resistivity and activation energy for conduction were found to decrease with heat recycling. This was explained by the annealing of the alloy and dissolution of the precipitated phases. The results obtained were all in agreement since the values of σ, Δ E and Φ were all considerably increased by quenching, Si or Fe content and γ-irradiation. These were highly ascribed to, and proved to be due to the formation of precipitated phases and lattice imperfections caused by γ-radiation damage. This may lead to the propagation of defective crystal lattices. Finally, conductivity measurements are a useful and sensitive (non-destructive) tool for controlling either Si or Fe content in the desired AlSi and AlFe alloys to the required quality. Gamma radiolysis at a selected absorbed dose could also be used to replace either Si or Fe dopants for controlling the electrical properties of pure Al metal in the Al industries.