Defect levels in n-silicon after high energy and high dose implantation of proton

Abstract Electrically active defects produced by MeV proton implantation at high doses (10 13 H + cm −2 ) followed by subsequent annealing (400 °C, 5 min) into n-type silicon have been investigated using capacitance voltage and deep level transient spectroscopy measurements on p + -n-n + diodes. It was found that the proton implantation followed by the annealing creates two shallow donor levels which are responsible for the observed breakdown voltage reduction. An unusual defect reaction observed after annealing has been reported. The amplitudes of the DLTS lines depend on the filling pulse length. Moreover, a minority carrier injection during the DLTS scan has shown that a defect observed in the temperature range 165 to 250 K can exist in different metastable configurations.