Dose Rate Effects: the Impact of Beam Dynamics on Materials Issues and Device Performance

Different implant architectures will exhibit disparities in scan rates, beam density, and temperature. Unless well understood and compensated for, these disparities can affect process results—especially when new architectures are incorporated into existing processes. In this article we will systematically examine the interaction between ion beam parameters related to beam scanning architectures and process results dependent on dose rate and thermal effects. The parameters of scan rate, duty cycle, beam density and beam current will be evaluated for effect on wafer temperature, thickness of amorphous layer, damage, and dopant profiles.