High quality p‐type chemical vapor deposited {111}‐oriented diamonds: Growth and fabrication of related electrical devices

In this paper the quality of boron-doped diamond films grown by microwave (MW) plasma activated chemical vapor deposition on high pressure high temperature synthetic type Ib {111}-oriented diamond substrates is estimated from the correlations between low-temperature cathodoluminescence analyses and Hall measurements. The layers attributes, obtained in the low methane concentration regime (0.05% [CH4]/[H2] ratio) and using low plasma powers (450–500 W), are completed by impurities incorporation investigations (secondary ion mass spectroscopy). Hall mobility values exceeding 550 cm2 V−1 s−1 at room temperature and characteristic excitonic luminescence peaks were obtained, indicating towards the high crystalline quality of our {111}-oriented diamond films. Based on these B-doped samples, Schottky junctions were fabricated and analyzed, presenting the highest rectification ratio when compared with similar devices.