Photoemission and core absorption studies of indium nitride

Abstract The vacuum ultra violet and soft X-ray core absorption measurements of InN are carried out using synchrotron radiation. The valence band and core level photoemission measurements are also carried out to investigate the surface conditions of InN thin film. InN thin film is fabricated on nitrided GaAs(11) substrate and is exposed in air. Not only indium and nitrogen elements, but also carbon and oxygen elements are detected by both photoemission and core absorption measurements. Carbon atoms mainly form the amorphous carbon on the film surface. Nitrogen ls core photoemission peaks show the presence of oxynitrides.