Design and Assessment of Metal-Organic Vapor Phase Epitaxy—Grown Dual Waveband Infrared Detectors

Dual waveband infrared detectors can be relatively complicated structures requiring stacking of single waveband detectors. The paper discusses variants of the back-to-back diode structure, which allows the detected waveband to be selected simply by changing the polarity of the bias. Results are presented for two structures: a dual waveband structure for two bands in the mid-infrared region and a dual mid-long waveband structure. The spectra are modeled using a method that takes account of interdiffusion between the layers. Radiative cross-talk is estimated for both of the structures and good agreement is found between the theoretical and measured spectra.