Segregation Coefficient of Boron and Arsenic at Polycrystalline Silicon / SiO2 Interface

We evaluated how the segregation coefficient of boron and arsenic at the polycrystalline silicon (polysilicon)/silicon dioxide (SiO 2 ) interface is reated to the polysilicon morphology (grain size and orientation). Although the polysilicon morphology of the polysilicon strongly depends on the oxidation temperature, the segregation coefficient of boron is temperature independent and has a value of 0.357. The segregation coefficient of arsenic, however, depends on the polysilicon morphology, and cannot be expressed with a single activation energy. When the morphology is fixed by high temperature annealing at 1100 o C, the segregation coefficient of arsenic for temperatures below 1100 o C is expressed with a single activation energy as m As =3.23×10 9 exp[- 1.97 (eV)/K B T]