A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependence on the dielectric critical electric field ( E Cd ) and its permittivity (? rd ) is theoretically studied. Finally, the proposed junction termination is experimentally validated using BenzoCycloButene (BCB) as dielectric material. Experimental results show that the proposed termination sustains more than 1200 V with a 70-?m-width and 100- ?m-depth trench filled by BCB.