CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies.

Voltage transient overshoot is an essential device characteristic of ESD protection diodes under CDM-like stress. Using 3D TCAD and vfTLP characterization, the impact of device architecture and middle-of-line contact scheme on voltage transient overshoot characteristics can be further explored in next bulk FinFET and GAA technology nodes.