Junction termination structure of a lateral high voltage power device

The present invention belongs to the field of semiconductor technology, specifically relates to a lateral junction termination structure of the high voltage power device. 9 the inner wall structure of the present invention, the curvature of junction termination structures inner wall N-type drift region and a P-type buried layer extends to 9 inner wall 2 an inner wall and a P-type buried layer is N-type drift region connecting terminal structure direct result, each extending to the middle direction direct junction termination structure in N-type drift region 29 and the inner wall of the vertical P-type buried layer having ɑ degree angle, angle of 45 degrees of ɑ; this can alleviate the electric field at the junction curvature effect. In the vertical direction of the extending direction of the connection, P-type buried layer 9 exceeds the N-type drift region 2 from 5 micrometers, improve charge imbalances. Advantageous effects of the present invention is to improve the junction termination structure and the curvature of the linear junction termination structure and a charge imbalance problems curvature effect of electric field connecting portion is connected to the device to avoid early breakdown, whereby the breakdown voltage optimization.