A self-aligned approach to fabricate planar gated nanowires field emitter arrays
2014
A self-aligned approach was developed to fabricate planar gated nanowire field emitter arrays (FEAs). A single mask was used to etch the gate dielectric and define the area for nanowire growth, in which a self-alignment between the gate and the nanowire cathode is achieved. A planar gated ZnO nanowires FEAs was fabricated by using this approach .
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
9
References
0
Citations
NaN
KQI