Radiation damage and radiation-induced segregation in single crystal stainless steel by RBS and PIXE channeling

Abstract The radiation damage and the radiation-induced segregation (RIS) in type 304 austenitic stainless steel single crystal were investigated with 1.6 MeV He ion irradiation up to 2.5 × 10 17 cm −2 at RT by using RBS and PIXE with channeling conditions (RBS-C and PIXE-C). By the RBS-C experiments, it is found that radiation-induced damage for (1 1 0) orientation increased more slowly than those for (1 0 0) and (1 1 1) orientations with He ion dose. By the PIXE-C experiments, it is found that the Si atoms are displaced from the lattice sites and segregate significantly to the surfaces of (1 0 0), (1 1 0) and (1 1 1) orientations and the S atoms also seem to be enriched slightly in the (1 0 0) and (1 1 0) surfaces during He ion irradiation.