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Characterization of extended defects in 4H-SiC by PL imaging
Characterization of extended defects in 4H-SiC by PL imaging
2016
Hidekazu Tsuchida
Isaho Kamata
Ryohei Tanuma
Masahiro Nagano
Keywords:
Silicon carbide
Photoluminescence
Analytical chemistry
Materials science
Optoelectronics
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