0.5 /spl mu/m/60 GHz f/sub max/ implanted base Si bipolar technology

A 0.5 /spl mu/m silicon bipolar technology for mixed digital/analogue RF applications is described. Transit frequencies of 51 GHz are achieved using low-energy implantation and subsequent RTP for base doping. A salicide layer serves to reduce base resistance. This enables maximum oscillation frequencies of 60 GHz and 14 ps ECL gate delay at the expense of only one additional mask in comparison to a silicon bipolar production technology.