A method of making an electrical contact socket on a substrate HgCdTe conductivity p and application to the manufacture of a diode P / N

THE INVENTION CONCERNS A METHOD FOR PRODUCING AN OUTLET ELECTRICAL CONTACT ON SUBSTRATE 1 HgCdTe CONDUCTIVITY P AND APPLICATION FOR PRODUCING LED NP. FOR MANUFACTURING LED NP, ON GRAVE BY IONIC BOMBING THROUGH FIRST MASK AN INSULATION LAYER 3 FILED ON SUBSTRATE 1 HgCdTe, SO AS TO MAKE A FIRST OPENING IN THE SAID LAYER ON REMOVES MASK AND ON MADE HEAT TREATMENT SUBSTRATE COVERED BY THE INSULATION LAYER SO AS TO OFFSET AT LEAST FALLING CONDUCTIVITY P INDUCED iONIC BOMBING IN PART 14 OF SUBSTRATE REGARD TO OPEN FIRST ON MADE THEN AN ION IMPLANTATION IN PART 22 OF SUBSTRATE THROUGH A SECOND MASK MAKING A PART CONDUCTIVITY N, ON REMOVES THE SECOND MASK AND ON GRAVE BY bOMBING ION THE INSULATION LAYER THROUGH A THIRD MASK MAKING A SECOND OPEN IN RESPECT OF THE SECOND PART, ON REMOVAL FINALLY AFTER rEMOVES THE THIRD MASK CONDUCTIVE LAYER 25, 27 IN THE FIRST AND SECOND OPENINGS.