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Interface control of Al 2 O 3 /AlGaN/GaN structures for MOS-HEMT application
Interface control of Al 2 O 3 /AlGaN/GaN structures for MOS-HEMT application
2019
Ryota Ochi
Yuji Ando
Shota Kaneki
Tamotsu Hashizume
Keywords:
Optoelectronics
High-electron-mobility transistor
Materials science
algan gan
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