Layer-by-layer MoS2:GO composite thin films for optoelectronics device applications

Abstract With reference of our previous report ( Appl. Surf. Sci. 474(2019)227), the molybdenum disulphide (MoS 2 ) thin film were prepared by the dip-coating technique at different temperatures (400 °C–450 °C) using methanolic solution of ammonium molybdate and ammonium thiocyanate that are used as bare-substrate for the deposition of graphene oxide (GO) thin films. For the deposition of graphene oxide (GO), commercially purchased GO (0.5 mg in 10 mL aqueous solution) was deposited by dip-coating technique on dip-deposited MoS 2 thin film to make layer-by-layer MoS 2 :GO composite thin films and hence studied their electronic and electrical behaviours. The micro-structural and surface morphology were studied using Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy, whereas optical band estimated from the optical absorption spectra. The electronic structure and their bonding properties were studied using X-ray photoelectron spectroscopy and the electrical behaviours were observed from the current-voltage (I-V) characteristic curve. The formation of different phases of MoS:GO thin films show an enhanced electronic and electrical performance due to their unique-structure and the synergetic effect of MoS 2 :GO nanosheets when compared to those of bare MoS 2 .