Study on crystal growth of In x Ga 1− x Sb under microgravity

In x Ga1− x Sb is a ternary alloy with tunable properties. The wavelength of In x Ga1− x Sb can be varied in the range of 1.7– 6.8 μm, which is in the infrared (IR) region and makes that In x Ga1− x Sb can be used as a substrate for IR detector and thermophotovoltaic (TPV). The phase diagram reveals that there is a large temperature gap between liquidus and solidus lines, which leads to constitutional supercooling and the formation of crystal defects during the solidification process of InGaSb crystal. Moreover, convection caused by gravity will increase the inhomogeneity of transport in the liquid region near the crystal growth interface, which makes it quite difficult to grow In x Ga1− x Sb crystal. The convection will be restrained in microgravity environment, and thus, it is very beneficial for crystal growth. This article introduces the effect of microgravity on the growth of In x Ga1− x Sb crystal and the results of the space growth experiment of In x Ga1− x Sb ternary crystal with a high concentration of In in SJ10 recoverable scientific experimental satellite.