A 90-ns one-million erase/program cycle 1-Mbit flash memory

Describes the design and performance of a 245-mil/sup 2/ 1-Mbit (128K*8) flash memory targeted for in-system reprogrammable applications. Developed from a 1.0- mu m EPROM-base technology, the 15.2- mu m/sup 2/ single-transistor EPROM tunnel oxide (ETOX) cell requires only 42 percent of the area required by the previous 1.5- mu m device. One of the most significant aspects of this 1-Mbit flash memory is the one-million erase/program cycle capability. The 1-Mbit memory exhibits 90-ns read access time while the reprogramming performance gives a 900-ms array erase time and a 10- mu s/byte programming rate. Ample erase and program margins through one-million erase/program cycles are guaranteed by the internal verify circuits. Column redundancy is implemented with the utilization of flash memory cells to store repaired addresses. >