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A Method for Characterizing Surface Defect in Si^C
A Method for Characterizing Surface Defect in Si^C
2003
Stanislav I. Soloviev
Robert T. Bondokov
I.I. Khlebnikov
Georgy Stratiy
Yuri I. Khlebnikov
Ying Gao
Xianyun Ma
Tangali S. Sudarshan
Keywords:
Optical microscope
Crystal growth
Leakage (electronics)
Grain boundary
Single crystal
Dislocation
Crystallography
Materials science
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