Theoretical investigation of ternary semiconductors half-Heusler RhTaZ (Z = Si, Ge and Sn) for thermoelectric applications
2021
The structural, electronic, elastic, thermodynamic and thermoelectric properties of RhTaZ (Z = Si, Ge and Sn) half-Heusler materials have been studied using density functional theory. We have found...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
32
References
0
Citations
NaN
KQI