A 31 GHz f/sub max/ lateral BJT on SOI using self-aligned external base formation technology
1998
A novel device structure and simple process technology for realizing low-power/high-performance SOI lateral BJTs are presented. Low base resistance has been achieved by employing a self-aligned external base formation process. Due to reduced parasitics, the fabricated device exhibited an f/sub max/ of 31 GHz, the highest value for an SOI BJT reported so far.
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