Gain of optically excited ZnCdSeZnSe quantum wells

Abstract We have studied the stimulated emission of MOVPE-grown quantum wells of Zn 0.78 Cd 0.22 Se, sandwiched between two thicker, zinc-richer layers. The gain of these samples has been measured, as a function of temperature, using the variable strip-length method. Its mechanism has been shown to be the radiative recombination of an inhomogeneously broadened exciton system.