Epitaxial Growth of AlN on 3C-SiC and Al 2 O 3 Substrates

A1N films were grown on the (100) plane of 3C-SiC/Si and the (0001) plane of A12O3 substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMA) and ammonia (NH3) as the precursors. The deposited films were characterized by X-ray diffraction (XRD) and a Read thin film camera. At 1150°C, preferentially oriented polycrystalline AlN films were obtained on both substrates and the crystal structure was wurtzite. The epitaxial relations were (1010)AlN//(100)SiC//(100)Si and (0001)AlN// (0001)Al2O3. The attempt to grow cubic AlN on 3C-SiC/Si was not successful.