Old Web
English
Sign In
Acemap
>
Paper
>
A revised approach to Schottky parameter extraction for GaN HEMT
A revised approach to Schottky parameter extraction for GaN HEMT
2010
wangxinhua
Miao Zhao
Xinyu Liu
Yingkui Zheng
Ke Wei
Keywords:
Electronic engineering
Schottky diode
Materials science
High-electron-mobility transistor
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]