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Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
2005
Shinsuke Sakashita
Kenichi Mori
Kazuki Tanaka
M. Mizutani
Masao Inoue
S. Yamanari
Jiro Yugami
Hiroshi Miyatake
Masahiro Yoneda
Keywords:
Metal gate
Electrode
Tin
Inorganic chemistry
Materials science
Optoelectronics
metal gate electrodes
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