Investigation of pseudomorphic InGaAs HEMT interfaces.

Pseudomorphic InGaAs high mobility transistors (PM. HEMTs) which exhibit the best performances are thermodynamically metastable. Investigations on both GaAs/InGaAs and AlGaAs/InGaAs interface vicinities have been performed through deep level characterizations and lifetesting experiments. Results indicate that interfaces of InGaAs strained quantum well HEMTs do not suffer particular degradation after 3000 hours of biased aging tests.