Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency

In this paper, a high power and high efficiency fully internally-matched GaN FET operating at C-band is presented. In this work, a C-band GaN amplifier is designed so that 2nd harmonic impedance is tuned to high efficiency and combining loss is maintained minimum. As a result, 224W output power and 56% power added efficiency was successfully obtained, which is the highest efficiency as for over 200W GaN amplifier operating in C-band.