Theoretical study of GaSb PV cells efficiency as a function of temperature

Abstract In this article the maximum power, voltage at maximum power point, and short-circuit current of gallium antimonide photovoltaic cells are predicted based on theoretical calculations and the best available experimental data. The GaSb photovoltaic cell is of prime importance in the construction of high performance thermophotovoltaic (TPV) generators. Data is presented for blackbody emitters maintained at 1350 K, 1600 K, and 1800 K. The operating parameters of the GaSb cell are computed for cell temperatures in the range of 0 to 120°C at each emitter temperature. A computer simulation shows a decrease in open-voltage, V oc , of only −1.61 mV/°C compared with the value of −2.3 mV/°C reported for Si cells. At 90°C the maximum power output of the GaSb cell is still close to 80% of its value at room temperature. The important result is that the energy conversion efficiency of the GaSb cell decreases much more slowly with increasing temperature for the TPV application than for the solar application.