Dielectric and ferroelectric properties of (111) preferred oriented PbZr0.53Ti0.47O3/Pb(Mg1/3Nb2/3)0.62Ti0.38O3/PbZr0.53Ti0.47O3 trilayered films

Abstract Highly (111) preferred oriented PbZr 0.53 Ti 0.47 O 3 /Pb(Mg 1/3 Nb 2/3 ) 0.62 Ti 0.38 O 3 /PbZr 0.53 Ti 0.47 O 3 (PZT/PMNT/PZT) trilayered ferroelectric thin films were prepared on (111)Pt/Ti/SiO 2 /Si substrates. At room temperature, the films have a dielectric constant of 2175 that decreases to 1870 and a dielectric loss of 0.05 that increases to 0.06 with increasing frequency between 10 2 and 10 5  Hz. Also, they exhibit well saturated polarization-versus-electric field hysteresis loops with a large remnant polarization of 13.4 μC/cm 2 and a low coercive field of 30 kV/cm. The leakage current density in the trilayered films is 4.1 × 10 −10  A/cm 2 , which increases to 4.0 × 10 −7  A/cm 2 with increasing electric field between 1 and 140 kV/cm. Such properties of (111) preferred oriented PZT/PMNT/PZT trilayered films lead naturally to possibilities for ferroelectric capacitors and memories.