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Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
2010
Suzuki Safumi
Sawada Kiyohito
Teranishi Atsushi
Asada Masahiro
Sugiyama Hiroki
Yokoyama Haruki
Keywords:
Doping
Oscillation
Voltage
Optoelectronics
Terahertz radiation
Resonant-tunneling diode
Materials science
Correction
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