Energy Barrier Layers and Internal Optical Loss in 1400-1600 nm Semiconductor Lasers

We investigated the effect of AlInAs energy barrier layers on the edge-emitting lasers of 1400–1600 nm spectral range. It was shown that the barrier layer at the waveguide-cladding heterojunction provides charge carrier accumulation in the waveguide and prevents the internal quantum efficiency from drop. The use of barrier layer enables increasing the pulse optical power from 9 to 13 W from 100 μm aperture.