Old Web
English
Sign In
Acemap
>
Paper
>
High power 1120 nm-diode lasers with highly strained InGaAs QWs
High power 1120 nm-diode lasers with highly strained InGaAs QWs
2001
F. Bugge
G. Erbert
R. Hulsewede
P. Ressel
R. Staske
H. Wenzel
Markus Weyers
U. Zeimer
Günther Tränkle
Keywords:
Optoelectronics
Laser power scaling
Fiber laser
Laser
Photochemistry
Chemistry
Diode
Distributed feedback laser
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]