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A 0.4 ?m2 self-aligned AND-type flash memory cell technology
A 0.4 ?m2 self-aligned AND-type flash memory cell technology
1997
Tetsuo Adachi
Masataka Kato
Takashi Kobayashi
Yoshimi Sudo
Hitoshi Kume
Tadao Morimoto
Keywords:
Computer hardware
Computer memory
Computer science
Non-volatile memory
Non-volatile random-access memory
Electronic engineering
EEPROM
Racetrack memory
Flash memory
cell technology
high capacity
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