Measurement of deep energy level of InP:Fe by OTCS technique

The deep energy level of semi insulation InP:Fe is measured by optical transient current spectroscopy(OTCS) technique.The effect of light intensity on OTCS measurement is discussed in detail.There exsit electron trap of E T=0.34 eV and hole trap of E T=1.13 eV in InP:Fe measured by powerful light at low temperature.The location of the OTCS peak of electron trap( E T=0.34 eV)moves to the direction of high temperature when light intensity increases.The measured value of E T is different at different light intensity.Theoretical correction of E T is carried out in terms of the effect of light intensity on the stuff ratio of the deep energy level.The experiments show that the error decreases greatly with the correction.