II–VI blue/green laser diodes on ZnSe substrates

This article reports the first blue/green laser diodes grown on ZnSe substrates. The laser structure employed is a p‐on‐n separate confinement heterostructure consisting of 0.8‐μm‐thick ZnMgSSe cladding layers lattice‐matched to ZnSe, 0.1‐μm‐thick ZnSe light guiding layers, and a single 60–200‐A‐thick ZnCdSe quantum well. Green laser emission (507–517 nm; 2.443–2.394 eV) was observed at temperatures from 77–220 K using cw excitation at 77 K and pulsed excitation (50 ns; 10−1–10−4 duty cycle) at higher temperatures. Blue laser diodes with outputs at 485 nm (2.553 eV) at 77 K have also been fabricated and tested.