Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors

Abstract Low threshold λ = 1.3 μm InGaAsP multi-quantum well (MQW) lasers have been realized by metalorganic vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP). Quaternary InGaAsP growth with TBA and TBP have demonstrated an improved group-V compositional controllability, compared to that with the conventional hydrides AsH 3 and PH 3 . As a result, the base InGaAsP MQW wafers have exhibited an excellent photoluminescence (PL) wavelength uniformity with the standard deviation of 2.6 nm over a 2-inch wafer, and the PL full width at half maximum (FWHM) of 8.3 meV at 4.2 K. Laser characteristics, such as threshold and efficiency, were comparable to those grown by hydrides. The threshold currents for 70%/95% coated 170 μm long devices were as low as 9 and 22 mA at 20 and 85°C, respectively. Thus, TBA and TBP are applicable for long wavelength lasers as substitutes for AsH 3 and PH 3 .