Innovative self-aligned triple patterning for 1x half pitch using single "spacer deposition-spacer etch" step
2011
We successfully demonstrate a new approach to achieve 15nm half pitch with a spacer based selfaligned
triple patterning (SATP). This new concept has a single spacer deposition and etch step to
achieve 15nm half pitch using immersion lithography. Current spacer based triple or quadruple
patterning approaches use two iterations of "spacer deposition / spacer etch" for pitch splitting, thus
generating multi-modal trench CD, line CD and, trench depth population leading to challenging
process control. The new concept overcomes CD population issues and reduces additional steps over
implemented double patterning, thus could relax process window. The key innovative aspect is an
undercut dry trim achieved by a selective dry etch process, followed by a flowable CVD (Eterna TM
FCVD TM ) based gap-fill that can fill the undercut structures.
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