The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds

Abstract ZrO 2 films were deposited on silicon substrates by oxygen-assisted decomposition of zirconium-β-diketonates at temperatures of 400–550°C. The deposits, fine-grained nearly stoichiometric monoclinic ZrO 2 , were hard and showed strong adherence to the substrate. The films were characterized by transmission electron microscopy, X-ray diffraction and electron microprobe analysis and by measuring their dielectric and optical properties. The index of refraction was found to be 2.18, and the optical energy band gap was found to be 5.16 eV. The dielectric constant at 1 MHz was 17–18, and the dielectric strength varied between 1 × 10 6 and 2.0 × 10 6 V cm −1 . Capacitance-voltage measurements at 1 MHz indicated the presence of effective surface states with a concentration in the range (1.0−6.0) × 10 11 cm −2 for films deposited at temperatures above 500°C or for films deposited at 400–450°C and annealed at above 750°C. The flat-band voltages were between −0.6 and + 0.2 V. The films showed satisfactory bias-temperature stability. The current-voltage characteristic followed an I ∝ V 2 dependence for negative bias and an I ∝ V 2.6 to I ∝ V 3.4 dependence for positive bias.