High-Voltage Hybrid IGBT Power Modules for Miniaturization of Rolling Stock Traction Inverters

A type of 3.3-kV/450-A half-bridge insulated- gate bipolar transistor (IGBT) power module combining the silicon (Si) and silicon carbide (SiC) technologies has been developed and reported in this paper, for the miniaturization of the Chinese high-speed railway rolling stock traction inverters. This module is developed by integrating the next-generation industrial standard high-voltage packaging topology and the state-of-the-art 3.3 kV wide bandgap semiconductor chip technology, to reduce the waste power dissipation during operation, which in turn can lead to effective downsizing of key components in the traction inverter design. The module layout characteristics and the SiC Schottky barrier diodes design for substitution of the conventional Si fast recovery diodes will be described in detail. The mechanical, thermal and electrical performances of the hybrid module are compared comprehensively with the Si-based counterpart. Based on the experimental results, an inverter system level evaluation of both modules is also conducted by electro-thermal simulation. The hybrid module shows advantages in loss reduction leading to great potential of system miniaturization, which is a cost effective solution for massive upgrading of the existing high-speed train traction inverters.