400-W Peak CW Power per Bar from 1-cm GaAs Bars For Emission Wavelengths From 800-nm to 980-nm, 90-W at 660-nm

2006 
Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths. Progress to date has allowed us to demonstrate > 400-W peak output from single 1-cm diode laser bars at emission wavelengths from 800-nm to 980-nm. The available range of emission wavelengths has also been increased, with 90-W bars shown at 660-nm. Peak power is seen to correlate closely to peak efficiency. Further advances in diode laser efficiency and low thermal resistance packaging technology continue to drive these powers higher. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers (leading to 73% efficient 100-W bars on copper micro-channel) and a reduction in packaging thermal resistance by optimizing micro-channel performance (leading to < 0.2-°C/W thermal resistance).
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