InGaN growth on ZnO (0001) substrate by metalorganic vapor phase epitaxy

InGaN growth has been performed on nearly lattice-matched ZnO (0001) substrates by metalorganic vapor phase epitaxy at relatively low temperatures below 600 °C. The grown layers were confirmed to be single crystalline by X-ray diffraction and reflection high energy electron diffraction analyses. By annealing the ZnO substrate under oxygen atmosphere prior to the growth, scratches due to polishing were completely removed, as observed by atomic force microscopy. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)